Olasupo, Kolawole

 

Kolawole R. Olasupo, Ph.D.,Associate Professor
  • Office: Electrical Engineering Building 324
  • Phone: 936-261-9925
  • E-mail: krolasupo at pvamu.edu

Brief Resume

Education:

Lehigh University, Pennsylvania, Electrical Engineering, Ph.D., 1994
Lehigh University, Pennsylvania, Electrical Engineering, M.S., 1990
Kutztown University of Pennsylvania, Pennsylvania, Physics, B. S. 1986

Research Interests:

Laboratory Instrumentation Development for Microelectronics Device Characterization. Nano-scaled device characterization with focus on leakage, power dissipation and battery life.

APPOINTMENTS: ( Industry = 21 years; Academic= 4 years )

Most Recent Positions:

Associate Professor of Electrical Engineering, Prairie View A&M University, Texas 2007- Present
Adjunct Professor of Electrical Engineering, Prairie View A&M University, Texas 2004- 2007
System Development Director, Advanced Micro Devices, Austin, Texas 2005- 2007
Reliability Engineering Director, Advanced Micro Devices, Austin, Texas 2000- 2005
Reliability Engineering Manager, Advanced Micro Devices, Austin, Texas 1996- 2000
ASIC Design Member of Technical Staff, AT&T Bell Laboratories, Allentown, PA. 1993- 1996
Technology Member of Technical Staff, AT&T Bell Laboratories, Allentown, PA. 1986- 1993

PRINCIPAL PUBLICATIONS

  • Over external 20 publications, and 100 internal technical reports
  • US Patents ( 9) in the area of Microelectronics Research

Sample Publications

M. N. O. Sadiku, K Olasupo, S. R. Nelatury, “ What Professors Do,” IEEE Potential,” P10-11, June 2012.

K.R. Olasupo and M.K. Hatalis, “Leakage Current Mechanism in Sub-Micron Polysilicon Thin-Film Transistors,” IEEE Transactions on Electron Devices, vol. ED-43, no. 8, 1996.

K.R. Olasupo and M. K. Hatalis, “Current Voltage Characteristics of Polysilicon Thin-Film Transistors,” Spring MRS Symp., San Francisco, CA, 1994

K.R. Olasupo, W. Yarbrough, and M. K. Hatalis, “The Effect of Drain Offset on Current-Voltage Characteristics in Sub Micron Polysilicon Thin-Film Transistors,” IEEE Transactions on Electron Devices, vol. ED-43, no. 8, 1996.

M. Yassine, H.E. Nariman, M. McBride, M. Uzer and K.R. Olasupo, “Time Dependent Breakdown of Ultrathin Gate Oxide,” Transactions on Electron Devices, vol. ED-47, no. 7, 2000.

A.M. Yassine, H.E. Nariman, K.R. Olasupo, and L. Govea, “A Study of Field Dependence of TDDB of Ultra-Thin Gate Oxide and Anomaly in the I-V of MOS Devices with Active Guard Ring,” IRW Final Report, 1998

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